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| Formosa MS MBR0520-N THRU MBR0560-N Chip Schottky Barrier Diodes Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.044 (1.1) 0.035 (0.9) SOD-323 0.106 (2.7) 0.090 (2.3) 0.012(0.3) Typ. 0.053 (1.35) 0.045 (1.15) 0.035(0.9) Typ. 0.035(0.9) Typ. Mechanical data Case : Molded plastic, JEDEC SOD-323 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.04 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 0.5 15 0.5 10 Rq JC CJ TSTG -55 90 120 +150 o UNIT A A mA mA C/w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE A B C D E V RRM *1 V RMS *2 VR *3 VF *4 Operating temperature (o C) (V) MBR0520-N MBR0530-N MBR0540-N MBR0550-N MBR0560-N 20 30 40 50 60 (V) 14 21 28 35 42 (V) 20 30 40 50 60 (V) 0.40 0.45 -55 to +125 *1 Repetitive peak reverse voltage *2 RMS voltage 0.65 -55 to +150 *3 Continuous reverse voltage *4 Maximum forward voltage RATING AND CHARACTERISTIC CURVES (MBR0520-N THRU MBR0560-N) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CHARACTERISTICS 0.6 0.5 50 INSTANTANEOUS FORWARD CURRENT,(A) BR 05 40 05 20 M ~M M BR M BR 05 50 M ~M BR 05 60 M M 0.4 R MB R MB 05 0.3 0.2 0.1 0 0 20 40 60 80 10 AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 15 05 50 100 20 -N 0 BR ~M 54 0N -N BR ~M 05 60 -N 1.0 0.5 120 140 160 180 200 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 PEAK FORWARD SURGE CURRENT,(A) 12 .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 9 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method FORWARD VOLT AGE,(V) 6 3 FIG.5 - TYPICAL REVERSE 0 1 5 10 50 100 CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL JUNCTION CAPACITANCE 350 300 250 200 150 100 50 0 JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, (mA) 10 1.0 Tj=75 C .1 Tj=25 C .01 .05 .1 .5 1 5 10 50 100 .01 0 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) |
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